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A Fully Integrated 300-MHz Channel Bandwidth 256 QAM Transceiver With Self-Interference Suppression in Closely Spaced Channels at 6.5-GHz Band

机译:完全集成的300 MHz通道带宽256 QAM收发器,在6.5 GHz频带的近距离通道中具有自干扰抑制功能

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摘要

We present a fully-integrated 256 QAM single-chip transceiver (TRX) with 300-MHz channel bandwidth at the 6.5-GHz band. A novel architecture for self-interference suppression (SIS) is proposed. A noise-canceling low-noise amplifier with the embedded programmable source degeneration network based on the bond wires, manifesting the notch filtering characteristics of the self-interference signal, has been utilized to facilitate the SIS, and LC-tuned tanks further improve the interference filtering in a receiver (RX) and considerable adjacent channel leakage power ratio in a transmitter (TX). The SAW-less /duplexer-less TRX allows TDD/FDD co-operation in closely spaced channels. The RX achieves a noise figure (NF) as low as 3 dB with +17.5-dBm out-of-band IIP3. The EVM is 2.02% and 2.72% for the RX and TX, respectively, in 160-MHz bandwidth OFDM 256 QAM. In the SIS mode, the blocker P1dB is -8 dBm, and the NF of the RX degrades only 2.1 dB (from 3.0 to 5.1 dB), withstanding 0-dBm interference at 150-MHz offset. The TRX exhibits a slight EVM degradation (from 2.02% to 2.98%) when receiving a -40-dBm 160-MHz bandwidth 256 QAM desired signal, in the presence of a -15-dBm 80-MHz bandwidth self-interference signal at 300-MHz offset. The TRX has been implemented in 0.13-$mu ext{m}$ CMOS with superior overall performances.
机译:我们提出了一个完全集成的256 QAM单芯片收发器(TRX),在6.5 GHz频段具有300 MHz的信道带宽。提出了一种用于自干扰抑制(SIS)的新颖架构。一种具有消除噪声的低噪声放大器,该放大器具有基于键合线的嵌入式可编程源极负反馈网络,具有自干扰信号的陷波滤波特性,可以简化SIS,LC调谐的储罐可以进一步改善干扰在接收器(RX)中进行滤波,在发送器(TX)中进行相当大的相邻信道泄漏功率比。无需SAW /无需双工的TRX允许在紧密间隔的通道中进行TDD / FDD合作。通过+ 17.5-dBm带外IIP3,RX可以实现低至3 dB的噪声系数(NF)。在160 MHz带宽的OFDM 256 QAM中,RX和TX的EVM分别为2.02%和2.72%。在SIS模式下,阻塞器P1dB为-8 dBm,而RX的NF仅降级2.1 dB(从3.0降至5.1 dB),在150 MHz偏移下承受0 dBm干扰。当接收到-40 dBm的160-MHz带宽256 QAM所需信号时,TRX表现出轻微的EVM降级(从2.02%到2.98%),并且存在-15dBm的80MHz带宽。 300 MHz偏移处的干扰信号。 TRX已在0.13-$ mu text {m} $ CMOS中实现,具有出色的整体性能。

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