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首页> 外文期刊>IEEE Transactions on Magnetics >Control of M-H Loop Shape in Perpendicular Recording Media by Ion Implantation
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Control of M-H Loop Shape in Perpendicular Recording Media by Ion Implantation

机译:离子注入控制垂直记录介质中M-H环的形状

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摘要

We have investigated the properties of CoCrPt-SiO2 perpendicular recording media as influenced by Co ion implantation, and have shown that a substantial change of the M-H loop squareness and a control of coercivity (Hc) over a wide range are feasible. Thin films of Ta(5 nm)/Ru(20 nm)/CoCrPt-SiO 2 (15 nm) were deposited and then subjected to the ion implantation with various acceleration energies, doses, and incident angles. It has been found that the cobalt ion implantation significantly alters the magnetic properties of CoCrPt-SiO 2. In the case of the near-perpendicular implantation at 60 KV, the M-H loop became much squarer but there was a decrease of coercivity 4300 to 2100 Oe. There was no noticeable decrease of the saturation magnetization by implantation. The reason for the significantly increased squareness by near-perpendicular implantation is mainly attributed to the increase of exchange coupling between the grains by cobalt ion implantation
机译:我们已经研究了CoCrPt-SiO2垂直记录介质受Co离子注入的影响,并表明在宽范围内M-H环矩形度的实质性变化和矫顽力(Hc)的控制是可行的。沉积Ta(5 nm)/ Ru(20 nm)/ CoCrPt-SiO 2(15 nm)薄膜,然后以各种加速能量,剂量和入射角进行离子注入。已经发现,钴离子注入显着改变了CoCrPt-SiO 2的磁性能。在60 KV的近垂直注入情况下,MH回路变得更加方形,但矫顽力从4300降低至2100 Oe 。注入引起的饱和磁化强度没有明显降低。近垂直注入显着增加矩形度的原因主要是由于钴离子注入增加了晶粒之间的交换耦合

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