Evaluation of Advanced Si and SiC Switching Components for Army Pulsed Power Applications

摘要

Super gate turn-off thyristors (SGTOs) implemented in both silicon (Si) and silicon carbide (SiC) semiconductors were investigated for high-voltage, high-current pulsed power applications. Modular 80 and 400 kA switches implemented in silicon (2.0-cm2 dies) and individual SiC switch die (0.16 cm2) were evaluated. The Si 80- and 400-kA switches were demonstrated (at ambient temperature) to provide rates of current rise (10%-90% peak current) and peak currents (145-mus width) of 24 kA/mus and 92 kA; and 40 kA/mus and 400 kA, respectively. The Si 80-kA switch was repetitively pulsed 1000 times with no significant performance degradation. The SiC switch die were demonstrated to provide specific rate of current rise and current density of 49 kA/mus/cm2 and 56.1 kA/cm2, which are at least 2.5 times greater than are possible in silicon pulse switches. The SiC switches were repetitively pulsed at 5 Hz up to 99 000 times without failure and were demonstrated to operate at case temperatures up to 150 degC