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Magnetic Behavior of Ni/Cu Multilayer Nanowire Arrays Studied by First-Order Reversal Curve Diagrams

机译:一阶反转曲线图研究Ni / Cu多层纳米线阵列的磁行为

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Arrays of Ni/Cu multilayer nanowires were fabricated by electrodeposition into alumina templates (pore diameter $ = $ 175 nm, interpore distance $ = 300$ nm), with an Ni disc thickness between 20 and 50 nm, and a Cu thickness between 10 and 35 nm. Vector major hysteresis loops were measured with an out-of-plane (along the nanowire axis) and inplane (perpendicular to the nanowire axis) applied field. During the magnetization reversal, we did not observe any net component of transverse magnetization $(M_{y})$ , perpendicular to the applied field $H_{x}$. Extrapolated first-order reversal curve (FORC) diagrams were measured, out-of-plane and inplane. While the major hysteresis loops of all arrays have similar shapes, their FORC diagrams reveal distinct patterns, suggesting different magnetic behavior. The magnetic anisotropy can be controlled by the ratio of Cu to Ni thickness, the nanowire axis becoming harder as the ratio increases. In the out-of-plane direction, the maximum interaction field is proportional to the Ni thickness. The FORCs show evidence of a large coercive field distribution, which we attribute to the smaller interaction fields in the nanodiscs along the edges of the samples. In the inplane direction, depending upon the easy axis direction, there can be a mixture of nanodiscs reversed by coherent and incoherent rotation, or by incoherent rotation only.
机译:Ni / Cu多层纳米线的阵列是通过电沉积到氧化铝模板中制成的(孔直径$ = 175 nm,孔间距$ = 300 $ nm),Ni盘厚度在20至50 nm之间,Cu厚度在10至50 nm之间。 35纳米使用平面外(沿纳米线轴)和平面内(垂直于纳米线轴)的施加场测量矢量主磁滞回线。在磁化反转期间,我们没有观察到垂直于外加磁场$ H_ {x} $的任何横向磁化净分量$(M_ {y})$。测量了平面外和平面内外推的一阶反转曲线(FORC)图。尽管所有阵列的主要磁滞回线都具有相似的形状,但它们的FORC图显示出不同的模式,表明磁行为不同。可以通过Cu与Ni的厚度比来控制磁各向异性,随着该比值的增加,纳米线轴变得更硬。在平面外方向上,最大相互作用场与Ni厚度成比例。 FORC显示出矫顽场分布较大的证据,这归因于沿着样品边缘的纳米圆盘中较小的相互作用场。在平面方向上,取决于易轴方向,可以存在通过相干和非相干旋转或者仅通过非相干旋转而反转的纳米圆盘的混合物。

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