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Limits to On-Chip Power Conversion With Thin Film Inductors

机译:薄膜电感器对片上功率转换的限制

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摘要

Successful implementation of on-chip power conversion using ferromagnetic inductors requires both high power efficiency and high power density. The theoretical limits to power density and efficiency possible with thin film ferromagnetic inductors in a buck converter topology with and without coupling are explored. Power density can be related to energy density of the inductor, while efficiency can be related to Q and the DC resistance loss of the inductor. To achieve 100 ${rm A/cm}^{2}$ for a 100 MHz 2:1 V converter witha 90% inductor efficiency, a peak Q of more than 8 is required with an energy storage of more than 5 ${rm nJ/mm}^{2}$. Using coupling, the power density can be further increased, but is ultimately limited by DC resistance loss in the coils. Figures of merit (FOM) for comparing inductors of various designs are also discussed.
机译:使用铁磁电感器成功实现片上功率转换需要高功率效率和高功率密度。探索了在具有和不具有耦合的降压转换器拓扑中,薄膜铁磁电感器可能达到的功率密度和效率的理论极限。功率密度可以与电感器的能量密度相关,而效率可以与Q和电感器的DC电阻损耗相关。对于具有90的100 MHz 2:1 V转换器,要实现100个 $ {rm A / cm} ^ {2} $ %的电感器效率,需要大于8的峰值Q,并且能量存储大于5 $ {rm nJ / mm} ^ {2} $ < / tex> 。使用耦合,可以进一步提高功率密度,但最终会受到线圈中直流电阻损耗的限制。还讨论了用于比较各种设计电感器的品质因数(FOM)。

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