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Effect of Substrate Temperature on the Ordered Phase Formation in Sm–Ni Thin Film Deposited on Cu(111) Underlayer

机译:衬底温度对在Cu(111)底层沉积Sm-Ni薄膜中有序相形成的影响

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摘要

${hbox{Sm}}_{17}{hbox{Ni}}_{83}$ (at.%) alloy thin films are prepared on Cu underlayers hetero-epitaxially grown on MgO(111) single-crystal substrates by employing an ultra-high vacuum molecular beam epitaxy system. The substrate temperature is varied from 100 $^ circ{hbox{C}}$ to 500 $^ circ{hbox{C}}$ . The film growth behavior and the detailed resulting film structure are respectively investigated by in situ reflection high-energy electron diffraction and by a combination of out-of-plane and in-plane X-ray diffractions. With increasing the temperature up to 300 $^ circ{hbox{C}}$, formation of ordered ${hbox{SmNi}}_{5}$ phase is recognized. The films deposited above 400 $^ circ{hbox{C}}$ consist of only epitaxial ${hbox{SmNi}}_{5} (0001)$ crystal, whereas the films deposited below the temperature include amorphous phase and/or a hexagonal ordered phase other than ${hbox{SmNi}}_{5}$. When the temperature is increased from 300 $^ circ{hbox{C}}$ to 500 $^ circ{hbox{C}}$, the long-range order degree of ${hbox{SmNi}}_{5}$ film increases from 0.60 to 0.97. ${hbox{SmNi}}_{5}$ phase formation is enhanced with increasing the temperature.
机译:通过在MgO(111)单晶衬底上异质外延生长的Cu底层上制备$ {hbox {Sm}} _ {17} {hbox {Ni}} _ {83} $(at。%)合金薄膜超高真空分子束外延系统。衬底温度从100 $ circ {hbox {C}} $变化到500 $ circ {hbox {C}} $。通过原位反射高能电子衍射以及平面外和平面X射线衍射的组合分别研究了膜的生长行为和详细的膜结构。随着温度升高到300 $ ^ circ {hbox {C}} $,可以识别出有序$ {hbox {SmNi}} _ {5} $相的形成。沉积在400 ^ circ {hbox {C}} $以上的膜仅由外延$ {hbox {SmNi}} _ {5}(0001)$晶体组成,而在温度以下沉积的膜包括非晶相和/或$ {hbox {SmNi}} _ {5} $以外的六边形有序相。当温度从300 $ ^ circ {hbox {C}} $增加到500 $ ^ circ {hbox {C}} $时,$ {hbox {SmNi}} _ {5} $胶片的远距离有序度从0.60增加到0.97。 $ {hbox {SmNi}} _ {5} $相的形成随着温度的升高而增强。

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