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2 GBits/in/sup 2/ dual stripe MR heads

机译:2 GBits / in / sup 2 /双条纹MR磁头

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Dual-stripe MR heads with linear density capability of 200 KBPI and track density capability of 11000 TPI have been manufactured. The write head, with a 15 turn coil and a gap length of 0.3 /spl mu/m, is made of conventionally plated Permalloy for both the leading and trailing poles. The thickness and track width of the trailing pole are 3.5 and 2.1 /spl mu/m, respectively. The MR elements have a 1.4 /spl mu/m track width, 1.1 /spl mu/m stripe height and a 17.5 nm thickness. The shield-to-shield separation is 0.18 /spl mu/m. The two MR elements are mutually biased and patterned-exchange domain stabilized. Recording tests were performed on a thin-film disk with a coercivity of about 3000 Oe and an M/sub r/t of 0.75 memu/cm/sup 2/. The read-back amplitude is as large as 1.02 mV(p-p), and the 50% roll-off density is as high as 160 kfci. Error rate test with a PRML channel at a data rate of 105 Mbits/s showed that a low on track error rate of 10/sup -10/ and an off-track capability of more than 15% of the track pitch could be easily achieved at a linear density of 200 KBPI and a track density of 11000 TPI.
机译:已制造出具有200 KBPI的线密度和11000 TPI的磁道密度的双条纹MR磁头。具有15匝线圈且间隙长度为0.3 / spl mu / m的写头由用于前极和后极的传统电镀坡莫合金制成。拖尾杆的厚度和走线宽度分别为3.5和2.1 / spl mu / m。 MR元件的迹线宽度为1.4 / spl mu / m,条带高度为1.1 / spl mu / m,厚度为17.5 nm。屏蔽层之间的间距为0.18 / spl mu / m。两个MR元件相互偏置,并且图案交换域稳定。在具有约3000Oe的矫顽力和0.75memu / cm / sup 2 /的M / sub r / t的薄膜盘上进行记录测试。回读幅度高达1.02 mV(p-p),50%的滚降密度高达160 kfci。使用PRML信道以105 Mbits / s的数据速率进行的误码率测试表明,可以很容易地实现10 / sup -10 /的低轨误码率和超过轨距15%的离轨能力线密度为200 KBPI,轨迹密度为11000 TPI。

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