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Patterned media write designs

机译:图案化媒体写设计

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Recording design alternatives are analyzed for 100 1 Gbit/in/sup 2/ vertical and horizontal patterned media, written at 1 Gbit/s with one and two pole heads. Bit write fields, disturb fields, and switching speeds are calculated as part of a system analysis of the theoretical potential of patterned media to address possible physics limits for conventional "featureless" continuous film media (these include thermal decay, nonlinear transition shift and transition noise, and high writer pole M/sub s/ requirements near the limit of known materials). The patterned media "bits" are assumed oriented vertically or horizontally by crystalline anisotropy, and smaller than 100 nm to allow single-domain, 1/2 ns switching. M/sub s/H/sub c/V/kT<500, implying thermal stability including media demagnetization and write head remanent fields, are nearly an order of magnitude areal density extensibility beyond 100 Gbit/in/sup 2/ with present-day head/media magnetic requirements.
机译:针对100 1 Gbit / in / sup 2 /垂直和水平图案化介质分析记录设计方案,以1 Gbit / s的速度写入一个和两个磁头。在对图案化介质的理论潜力进行系统分析的过程中,计算位写入场,干扰场和切换速度,以解决常规“无特征”连续胶片介质(包括热衰减,非线性跃迁和跃迁噪声)的可能的物理限制。 ,以及接近已知材料限制的较高写入极M / sub s /要求)。假定图案化的介质“位”由于晶体各向异性而垂直或水平取向,并且小于100 nm以允许单域1/2 ns切换。 M / sub s / H / sub c / V / kT <500,表明包括介质退磁和写头剩余磁场在内的热稳定性,是当今超过100 Gbit / in / sup 2 /的面密度可扩展性近一个数量级。磁头/介质的磁性要求。

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