Magnetic, Electrical Properties, and Structure of Cr-AlN and Mn-AlN Thin Films Grown on Si Substrates

摘要

We have studied magnetic, electrical properties, and structure of Cr-AIN and Mn-AIN thin films grown on the Si substrates. Each magnetic state in Alo.esCro.orN and Al{sub}0.93Mn{sub}0.09N thin films changes from a paramagnetic state to a superparamagnetic state as temperature decreases. Room temperature (RT) ferromagnetism cannot be observed in each thin film. Each electrical property in Al{sub}0.93Mn{sub}0.07N and Al{sub}0.93Mn{sub}0.09N thin films becomes semiconducting, since the electrical resistivities of these thin films are higher than 10{sup}7μΩ·cm at RT. At 77 K, tunneling phenomena for the Al{sub}0.93Mn{sub}0.07N thin film and rectification for the Al{sub}0.93Mn{sub}0.09N thin film can be observed. Furthermore, the crystal structure in each thin film is also a poly crystalline structure with the preferential orientation of hcp (0001).