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Comments on 'Flash memory under cosmic and alpha irradiation'

机译:关于“宇宙和阿尔法辐射下的闪存”的评论

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In the original paper by A.D. Fogle et al. (see ibid., vol.4, no.3, p.371-6, Sep. 2004), the authors discuss the effects of ionizing radiation on flash memories, concluding that the information stored in contemporary flash memories is almost insensitive to ionizing radiation. This result is in partial agreement with various papers recently presented in the literature, which unfortunately are not mentioned, with one exception. The present authors believe that data reported in some of these and in other papers quoted in this communication could help the interested reader to clarify the data presented by Fogle et al., through a critical comparison with existing results in the literature.
机译:在A.D. Fogle等人的原始论文中。 (参见同上,第4卷,第3期,第371-6页,2004年9月),作者讨论了电离辐射对闪存的影响,认为存储在现代闪存中的信息几乎对电离不敏感。辐射。这一结果与文献中最近发表的各种论文部分一致,不幸的是没有提及,只有一个例外。本作者认为,通过与文献中的现有结果进行严格的比较,本通讯中引用的其中一些和其他论文中报告的数据可以帮助感兴趣的读者弄清Fogle等人提供的数据。

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