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Method and apparatus for determining the robustness of memory cells to alpha-particle/cosmic ray induced soft errors

机译:确定存储单元对α粒子/宇宙射线诱发的软错误的鲁棒性的方法和装置

摘要

Apparatus and methods for determining the robustness of a device to soft errors generated by alpha-particle and/or cosmic ray strikes. In one embodiment, the method includes the steps of estimating energies of the alpha-particle and/or cosmic ray strikes; computing a number of electron-hole pairs generated for a predetermined distance of travel by the alpha-particle and/or cosmic ray into the device based on the estimated energies; computing the absorption coefficient in silicon for a light pulse with a predetermined wavelength; computing a first pulse width/intensity for the light pulse to generate the number of electron-hole pairs for the predetermined distance of travel by the light pulse into the device; producing the light pulse, the light pulse having a light pulse energy which is controlled by a pulse width and an intensity, wherein the pulse width/intensity is at a second pulse width/intensity which is less than the first pulse width/intensity and the light pulse energy is at a first light pulse energy which is low enough to avoid generating soft errors in the device; applying the light pulse to the device at a predetermined location; varying the light pulse energy to a second light pulse energy to generate a soft error; and detecting soft errors in the device. The present invention additionally provides inexpensive methods and apparatus that would accurately simulate an alpha-particle and/or cosmic ray strike in predetermined areas of a memory cell.
机译:用于确定设备对由alpha粒子和/或宇宙射线撞击产生的软错误的鲁棒性的设备和方法。在一个实施例中,该方法包括以下步骤:估计α粒子和/或宇宙射线撞击的能量。基于估计的能量,计算由α粒子和/或宇宙射线在预定的行进距离内产生的多个电子-空穴对;计算具有预定波长的光脉冲在硅中的吸收系数;计算光脉冲的第一脉冲宽度/强度,以在光脉冲进入装置的预定行进距离内生成电子-空穴对的数量;产生光脉冲,该光脉冲具有由脉冲宽度和强度控制的光脉冲能量,其中脉冲宽度/强度处于第二脉冲宽度/强度,第二脉冲宽度/强度小于第一脉冲宽度/强度,并且光脉冲能量是第一光脉冲能量,其足够低以避免在装置中产生软错误;在预定位置向设备施加光脉冲;将光脉冲能量改变为第二光脉冲能量以产生软误差;并检测设备中的软错误。本发明另外提供了便宜的方法和设备,其将精确地模拟存储单元的预定区域中的α粒子和/或宇宙射线撞击。

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