Point defects in ZrO/sub 2/ high-/spl kappa/ gate oxide

摘要

This paper presents calculations of the electrical energy levels of the main point defects in ZrO/sub 2/, the oxygen vacancy and the oxygen interstitial. The levels are aligned to those of the Si channel using the known band offsets. The oxygen vacancy gives an energy level in the Si gap or just above the gap, depending on its charge state. This is the main electrically active defect and trap in ZrO/sub 2/ films. The oxygen interstitial gives levels just above the oxide valence band, and the neutral interstitial also gives a level near the Si conduction band.