Neutron-Induced Charge Collection Simulation of Bulk FinFET SRAMs Compared With Conventional Planar SRAMs

摘要

The relative neutron-induced soft-error rate (SER) of bulk FinFET SRAMs compared to planar SRAMs is estimated based on drain area, collected charge, and critical charge using mixed-mode 3-D TCAD simulations. The critical charges of the bulk FinFET and planar devices are comparable, with identical gate length, gate width, and gate oxide thickness. However, the charges collected by the bulk FinFET drain due to ion strikes are smaller than those by the planar FET drain. Bulk FinFETs are anticipated to exhibit lower SER sensitivity compared to planar FETs.