Thermo-Mechanical Reliability of Double-Sided IGBT Assembly Bonded by Sintered Nanosilver

摘要

Double-sided insulated gate bipolar transistor (IGBT) assemblies bonded by sintered nanosilver are fabricated in this paper. Die-shear tests reveal that the lowest bonding strength between the chip and the substrate of the assemblies is about 20 MPa. Furthermore, temperature cycling tests ($-hbox{40} ^{circ}hbox{C}$ to 150 $^{circ}hbox{C}$) indicate that the shear strength declines as the number of cycles increases. In addition, X-ray photographs show increasing number and size of voids. The bonding area decreases with increasing number of cycles, as indicated by scanning acoustic microscopy. Finally, we study both the steady state and the transient thermal performance of the double-sided IGBT assembly by the finite-element method using the commercial code ANSYS to better understand the superiority of the assembly in thermal management.