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Thermal-Aware Small-Delay Defect Testing in Integrated Circuits for Mitigating Overkill

机译:集成电路中的热感知小延迟缺陷测试,可消除过大的杀伤力

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摘要

At-speed testing of deep-submicrometer or nano-scale integrated circuits (ICs) consumes excessive power and creates hotspots and temperature gradient in the chip-under-test. The problem worsens for 3-D ICs, where heat dissipation across layers is more unbalanced. These hotspots in a circuit often cause severe degradation of performance and reliability, as a rise in temperature can introduce an extra delay along paths. As a result, the delay of an otherwise fault-free path may exceed the functional clock period. Such thermal emergencies can thus lead to over-detection and undue yield loss during testing. Their effects will be more severe for small-delay defects (SDDs), which target to sensitize the long paths in a circuit. In this paper, we quantify, for the first time, the impact of thermal emergencies on SDDs and provide a solution to mitigate them. The proposed method is based on: 1) a new thermal-aware (TA) path-selection method, 2) a TA test-ordering method, and 3) an effective scan architecture and a test-application scheme. Experimental results on benchmarks demonstrate that the new method can significantly reduce the number of over-detections of SDDs.
机译:深亚微米或纳米级集成电路(IC)的全速测试会消耗过多的功率,并在被测芯片中产生热点和温度梯度。对于3-D IC,问题更加恶化,因为3-D IC的层间散热更加不平衡。电路中的这些热点通常会导致性能和可靠性严重下降,因为温度升高会沿路径引入额外的延迟。结果,原本无故障的路径的延迟可能会超过功能时钟周期。这样的紧急情况可能会导致检测过程中的过度检测和不适当的良率损失。对于小延迟缺陷(SDD)而言,它们的影响将更为严重,这些缺陷旨在使电路中的长路径敏感。在本文中,我们首次量化了紧急热事件对SDD的影响,并提供了缓解这些问题的解决方案。所提出的方法基于:1)一种新的热感知(TA)路径选择方法,2)TA测试排序方法,以及3)有效的扫描架构和测试应用方案。基准上的实验结果表明,该新方法可以显着减少SDD的过度检测次数。

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