Exploiting Unused Spare Columns and Replaced Columns to Enhance Memory ECC

摘要

Due to the emergence of extremely high density memory along with the growing number of embedded memories, memory yield is an important issue. Memory self-repair using redundancies to increase the yield of memories is widely used. Because high density memories are vulnerable to soft errors, memory error correction code (ECC) plays an important role in memory design. In this paper, methods to exploit spare columns including replaced defective columns are proposed to improve memory ECC. To utilize replaced defective columns, the defect information needs to be stored. Two approaches to store defect information are proposed—one is to use a spare column and the other is to use a content-addressable-memory. Experimental results show that the proposed method can significantly enhance the ECC performance.