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首页> 外文期刊>IEEE Transactions on Circuits and Systems >Complementary two-transistor circuits and negative differential resistance
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Complementary two-transistor circuits and negative differential resistance

机译:互补两晶体管电路和负差分电阻

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The DC behavior of nonlinear one-ports using two complementary Ebers-Moll-modeled transistors and lacking internal independent sources is discussed. It is proven that, in the absence of internal resistors, all such one-ports-irrespective of their internal topology and transistor parameter values-cannot exhibit negative differential resistance (NDR) for any value of an external biasing current source. One circuit using two complementary transistors and no resistors is of particular interest, since it is often cited as a two-transistor simplified model for silicon-controlled rectifier devices. The results demonstrate that either the transistor behavior unaccounted for in an Ebers-Moll-type model must be involved in this one-port's NDR behavior, or the presence of internal resistors is essential to such a circuit's behavior having even a generally correct qualitative character.
机译:讨论了使用两个互补的Ebers-Moll模型晶体管且缺乏内部独立源的非线性单端口的DC行为。事实证明,在没有内部电阻器的情况下,所有此类单端口,无论其内部拓扑和晶体管参数值如何,对于任何外部偏置电流源的值都不会表现出负差分电阻(NDR)。使用两个互补晶体管而不使用电阻器的一个电路特别令人感兴趣,因为它经常被引用为可控硅整流器器件的两晶体管简化模型。结果表明,要么Ebers-Moll型模型中未说明的晶体管行为必须与该单端口的NDR行为有关,要么内部电阻的存在对于这种电路的行为(甚至具有通常正确的定性特征)至关重要。

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