New RTD-boostrapped current and voltage references. I. Self-bootstrapped references

摘要

New current and voltage references are proposed which utilize depletion-mode field effect transistors and resonant tunneling diodes (RTDs) in a self-bootstrapped configuration to take advantage of the ultra-low local transconductance of RTDs and the high output-impedance of cascoded amplifier stages. These references promise improved supply rejection compared with that of the best existing GaAs MESFET voltage references.