Class E half-wave low dν/dt rectifier operating in a range offrequencies around resonance

摘要

A Class E half-wave low dν/dt rectifier is analyzed; simulation and experimental results are given when it operates in a large range of frequencies around resonance. The diode parasitic capacitance is included in the parallel capacitance. The leads inductance and the isolation transformer leakage inductance (if any) are included in the series inductance. Simple and accurate modeling is thus possible. Equations describing the circuit operation are derived for the rectifier being driven by a sinusoidal voltage source. Theoretical, simulation and experimental results are in good agreement