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A new BiCMOS increased full-swing converter forlow-internal-voltage ULSI systems

机译:用于低内部电压ULSI系统的新型BiCMOS增加的全摆幅转换器

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In this work, a new BiCMOS increased full-swing inverter (IFSI) and a new BiCMOS increased full-swing buffer (IFSB) for low voltage/low power ULSI systems are proposed. Based on the SPICE simulations, we demonstrate that these circuits can operate at low internal voltage (V int) and have low input signal swing. With Vint>|Vt| (assuming Vtn=-Vtp ), the circuits work properly. When the capacitor load is larger than 0.6 pf, the propagation delays and the delay power products of the proposed circuits for different internal voltages are better than those of previous circuits under the same circuit design parameters. Moreover, the proposed circuits achieve significant improvement in speed and noise margin. The results given here can avoid the trial and error step in the circuit sizing operation to reduce the power consumption
机译:在这项工作中,针对低压/低功率ULSI系统,提出了一种新的BiCMOS增加的全摆幅反相器(IFSI)和新的BiCMOS增加的全摆幅缓冲器(IFSB)。基于SPICE仿真,我们证明了这些电路可以在较低的内部电压(V int)下工作,并具有较低的输入信号摆幅。使用Vint> | Vt | (假设Vtn = -Vtp),电路正常工作。当电容器负载大于0.6 pf时,在相同的电路设计参数下,所建议的电路在不同内部电压下的传播延迟和延迟功率乘积要好于以前的电路。而且,所提出的电路在速度和噪声容限方面实现了显着的改善。此处给出的结果可以避免电路尺寸调整操作中的反复试验步骤,从而降低了功耗

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