Behavioral Modeling Methods for Switched-Capacitor $Sigma Delta$ Modulators

摘要

Sigma–delta Modulators $(Sigma Delta {rm Ms})$ are cornerstone elements in oversampled analog-to-digital converters and digital-to-analog converters (DACs). Although transistor-level simulation is the most accurate approach known for these components, this method becomes impractical for complex systems due to its long computational time requirements. Behavioral modeling has become a viable solution to this problem. In this paper, we study styles and issues in the accurate modeling of low-power, high-speed $Sigma Delta{rm Ms}$ and introduce two new behavioral models for switched-capacitor (SC) integrators. The first model is based on the SC integrator transient response, including the effects of the amplifier transconductance, output conductance, and the dynamic capacitive loading effect on the settling time. The second model is based on a symbolic node admittance matrix representation of the system. Nonidealities such as jitter, thermal noise, and DAC mismatch are also addressed and included in a dual-band, GSM/WCDMA, second-order, multibit $Sigma Delta{rm M}$ model with individual level averaging. VHDL-AMS and MATLAB Simulink were used as modeling languages. Both models are validated against experimental data, showing competitive results in the signal-to-noise-plus-distortion ratio. A comparative analysis between the proposed and a traditional model is presented, with emphasis on the degrading effects due to the integrator dynamics. Moreover, a general simulation speed analysis of the proposed models is addressed.