A Low Power Localized 2T1R STT-MRAM Array With Pipelined Quad-Phase Saving Scheme for Zero Sleep Power Systems

摘要

The high leakage power due to process nodes scaling down has been one of the critical issues in CMOS circuits, especially the sleep power critical systems. The conventional retention CMOS register based approaches cannot fully address the high standby energy issue in long time standby systems. The recent non-volatile Flip-Flop (nvFF) based approaches may achieve zero sleep power consumption, but still face the challenges of high saving power and area overhead, and low data reliability. This paper presents a new resistive Non-Volatile Memory (NVM) based circuit architecture with zero leakage power dissipation. It stores the states of the registers in the localized spin-torque-transfer magnetic random access memory (STT-MRAM) array through scan chains, which has reduced by more than 20% sleep energy than conventional nvFF schemes, and saved by more than 99.8% sleep energy compared to the retention CMOS register based approaches when the sleep time is longer than 1 s. Moreover, the proposed pipelined quad-phase saving scheme maximizes the saving speed, while reduces the peak saving current.