SPICE Compact Modeling of Bipolar/Unipolar Memristor Switching Governed by Electrical Thresholds

摘要

In this work, we propose a physical memristor/resistive switching device SPICE compact model, that is able to accurately fit both unipolar/bipolar devices settling to its current-voltage relationship. The proposed model is capable of reproducing essential device characteristics such as multilevel storage, temperature dependence, cycle/event handling and even the evolution of variability/parameter degradation with time. The developed compact model has been validated against two physical devices, fitting unipolar and bipolar switching. With no requirement of Verilog-A code, LTSpice, and Spectre simulations reproduce distinctive phenomena such as the preforming state, voltage/cycle dependent random telegraph noise and device degradation.