$mu$ m CMOS process. Comp'/> A Frequency Shaping Neural Recorder With 3 pF Input Capacitance and 11 Plus 4.5 Bits Dynamic Range
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A Frequency Shaping Neural Recorder With 3 pF Input Capacitance and 11 Plus 4.5 Bits Dynamic Range

机译:具有3 pF输入电容和11 Plus 4.5位动态范围的频率整形神经记录仪

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This paper presents a frequency-shaping (FS) neural recording architecture and its implementation in a 0.13 $mu$ m CMOS process. Compared with its conventional counterpart, the proposed architecture inherently rejects electrode offset, increases input impedance 5–10 fold, compresses neural data dynamic range (DR) by 4.5-bit, simultaneously records local field potentials (LFPs) and extracellular spikes, and is more suitable for long-term recording experiments. Measured at a 40 kHz sampling clock and ${pm} 0.6$ V supply, the recorder consumes 50 $mu$W/ch, of which 22 $,mu$W per FS amplifier, 24 $mu$ W per buffer, 4 $mu$ W per 11-bit successive approximation register analog-to-digital converter (SAR ADC). The input-referred noise for LFPs and extracellular spikes are 13 $,mu$ Vrms and 7 $mu$Vrms, respectively, which are sufficient to achieve high-fidelity full-spectrum neural data. In addition, the designed recorder has a 3 pF input capacitance and allows “ $11+4.5$”-bit neural data DR without system saturation, where the extra 4.5-bit owes to the FS technique. Its figure-of-merit (FOM) based on data DR reaches 36.0 fJ/conversion-step.
机译:本文介绍了一种频率整形(FS)神经记录架构及其在0.13 CMOS工艺中的实现。与传统的同类产品相比,拟议的体系结构固有地消除了电极偏移,将输入阻抗提高了5-10倍,将神经数据动态范围(DR)压缩了4.5位,同时记录了局部场电势(LFP)和细胞外尖峰,并且具有更多优势适用于长期录音实验。在40 kHz采样时钟和 $ {pm} 0.6 $ V电源下测量,记录器消耗了50 $ mu $ W / ch,其中22 $,mu $ <每个FS放大器的/ tex> W,每个缓冲区24 $ mu $ W,4 $ mu $ W。 LFP和细胞外尖峰的输入参考噪声为13 $,mu $ Vrms和7 $ mu $ Vrms,分别足以实现高保真全频谱神经数据。此外,设计的记录器具有3 pF的输入电容,并允许“ $ 11 + 4.5 $ ”位神经数据DR而无需系统饱和,额外的4.5位归功于FS技术。它基于数据DR的品质因数(FOM)达到36.0 fJ /转换步骤。

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