Demonstration of the n-channel vertical-cavity double-heterostructure optoelectronic switching laser and heterostructure field effect transistor

摘要

Optoelectronic integration of vertical-cavity surface-emitting lasers would be highly desirable for future optical interconnect and preprocessing applications. Configuring the double-heterostructure optoelectronic switch (DOES) as such a laser offers the potential for integration and utilization of the bistable switching action for thresholding and photonic switching operations. The authors present the initial results of fabricating the DOES as a simple, two-terminal, surface-emitting laser and as a heterostructure field-effect transistor (HFET). Pulsed threshold currents of 10 mA are obtained in conjunction with excellent, high-voltage contrast switching. The HFET had a peak transconductance of 40 mS/mm and a peak drain to source current density of 120 mA/mm.