High-speed, low-threshold InGaAsP semi-insulating buried crescent lasers with 22 GHz bandwidth

摘要

The authors have fabricated high-speed, low-threshold 1.3 mu m InGaAsP semi-insulating buried crescent lasers with a CW 3 dB modulation bandwidth of 22 GHz and a threshold current as low as 6.5 mA at room temperature. This is the highest 3 dB modulation bandwidth ever reported for the planar-type semiconductor laser. These results were achieved by implementing a submicron photolithographic process in the channel etching to reduce the cavity width and a polyimide dielectric layer under the bonding pad area to minimize the electrical parasitics.