A proposed electroabsorption modulator at 1.55 mu m in silicon/silicon-germanium asymmetric quantum-well structures

摘要

A new, fast, intersubband 1.55- mu m electrooptic modulator in the SiGe/Si/CaF/sub 2/-on-Si stepped-quantum-well system is proposed and analyzed. At applied electric fields of +or-8 V/ mu m, resonant 1-3 conduction-intersubband absorption is predicted to give 18 dB of optical extinction for narrow-linewidth transitions.