Novel technology for hybrid integration of photonic and electronic circuits

摘要

We have developed a new three-dimensional integration technology which involves hybrid integration of photonic and electronic circuits by means of polyimide bonding. To demonstrate this technology, we fabricated a GaAs metal-semiconductor-metal photodetector on a silicon substrate. Each photodetector on a polyimide layer is electrically connected to the electrode on the silicon substrate. The electrical interconnection between the photodetector and electrode on the silicon substrate consists of electroplated gold through a through-hole. The photoresponsivity of the photodetector is 0.3 A/W.