InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE

摘要

The design and operation of InGaAsP-InP ridge-waveguide (RW) distributed Bragg reflector (DBR) multiple quantum-well lasers with first-order surface gratings are presented. The RW DBR lasers are fabricated using only a single growth step without growth on a corrugated surface. Uncoated devices with grating etch depths of 0.6 and 0.5-/spl mu/m exhibit pulsed threshold currents of 32 and 43 mA with slope efficiencies of 0.34 and 0.24 W/A, respectively. The device with a grating etch depth of 0.5-/spl mu/m operates on a single longitudinal mode with about 40 dB side-mode suppression. All these results are from devices with Bragg condition wavelengths which are red-shifted from the peak spontaneous emission wavelength by over 400 /spl Aring/.