Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers

摘要

Fabrication and characterization of monolithically integrated SiGe-Si PIN-HBT transimpedance photoreceivers are reported. SiGe-Si technology has been developed leading to SiGe-Si HBT's with f/sub T/=23 GHz and f/sub max/=34 GHz, and to PIN photodiodes with responsivity of 0.3 A/W at /spl lambda/=850 nm and bandwidth of 450 MHz. SiGe-Si HBT transimpedance amplifiers showed transimpedance gain of 52.2 dB./spl Omega/ and bandwidth of 1.6 GHz, and the photoreceivers exhibited the bandwidth of 460 MHz.