7.1 GHz bandwidth monolithically integrated In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As PIN-HBT transimpedance photoreceiver

摘要

A monolithically integrated photoreceiver using an InAlAs/InGaAs HBT-based transimpedance amplifier has been fabricated and characterized. The p-i-n photodiode is implemented using the base-collector junction of the HBT. The 5 /spl mu/m/spl times/5 /spl mu/m emitter area transistors have self-aligned base metal and non-alloyed Ti/Pt/Au contacts. Discrete transistors demonstrated f/sub T/ and f/sub max/ of 54 GHz and 51 GHz, respectively. The amplifier demonstrated a -3 dB transimpedance bandwidth of 10 GHz and a gain of 40 dB/spl Omega/. The integrated photoreceiver with a 10 /spl mu/m/spl times/10 /spl mu/m p-i-n photodiode showed a -3 dB bandwidth of 7.1 GHz.