Room Temperature Continuous-Wave Operation of Buried Ridge Stripe Lasers Using InAs-InP (100) Quantum Dots as Active Core

摘要

Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 (mu)m were grown by gas source molecular beam epitaxy on (100) InP substrates. Room temperature continuous-wave (CW) operation of QD-based buried ridge stripe lasers is reported. We investigated experimentally the relevant CW performances of as-cleaved InP-based QD lasers for telecom applications such as temperature properties (T_(0) velence 56 K), infinite length threshold current density (J_(infinity) approx 150 A/cm~(2) per QDs layer) and internal efficiency (0.37 W/A). Lasing in pulsed mode is observed for cavity length as short as 200 (mu)m with a threshold current of about 37 mA, demonstrating the high gain of the QD's active core. In addition, the Henry parameter of these InP-based QD lasers is experimentally determined using the Hakki-Paoli method ((alpha)_(H) approx 2.2).