Room temperature continuous-wave operation of lnAs/lnP(100) quantum dot lasers grown by gas-source molecular-beam epitaxy

摘要

We report on the InAs quantum dots (QDs) laser in the 1.55 μm wavelength region grown by gas source molecular-beam epitaxy. The active region of the laser structure consists of fivefold-stacked InAs QD layers embedded in the InGaAsP layer. Ridge waveguide lasers were processed and continuous-wave mode operation was achieved between 20 and 70 ℃, with characteristic temperature of 69 K. High internal quantum efficiency (56%) and low infinite length threshold current density (128 A/cm~2 per QD layer) was obtained for the as-cleaved devices at room temperature. The lasing wavelength range between 1.556 and 1.605 μm can be covered by varying the laser cavity length.