The Lasing Characteristics of GaN-Based Vertical-Cavity Surface-Emitting Laser With AlN-GaN and Ta_(2)O_(5)-SiO_(2) Distributed Bragg Reflectors

摘要

The characteristics of a GaN-based vertical-cavity surface-emitting laser (VCSEL) with 25 pairs AlN-GaN distributed Bragg reflector (DBR) and eight pairs Ta_(2)O_(5)-SiO_(2) DBR was investigated and analyzed under the optical pumping at room temperature. The GaN-based VCSEL emits a blue wavelength at 448 nm with a linewidth of 0.17 nm with a near-field emission spot diameter of about 3 (mu)m. The laser beam has a near linear polarization with a degree of polarization of about 84percent. The laser shows a high spontaneous emission coupling efficiency of about 5 X 10~(-2) and a high characteristic temperature of about 244 K.