Single-Facet Folded-Cavity Diode Laser With Ultrasmall Bend Radius High-Index-Contrast Oxidized AlGaAs Ridge Waveguide

摘要

AlGaAs heterostructure high-index-contrast (HIC) ridge waveguide (RWG) diode lasers incorporating a folded-cavity single-facet resonator with a folding bend radius as small as $r=10~mu$ m are demonstrated. Fabricated by a self-aligned deep dry etch (through the active region) plus nonselective O$_{2}$-enhanced wet thermal oxidization process, the low-index, insulating, and interface-passivating wet thermal oxide grown directly on the etch-exposed AlGaAs waveguide sidewalls yields a high lateral refractive index contrast of $Delta nsim {1.7}$ and provides strong optical mode confinement. The HIC RWG device geometry also completely eliminates lateral current spreading, which results in an excellent overlap between the optical field and the gain region of the single InAlGaAs quantum-well graded-index separate confinement heterostructure. A threshold current of $I_{rm th}=65$ mA is obtained for the $r=10~mu$ m device (a half-racetrack ring resonator), giving a threshold current density of $J_{rm th}={1503}$ A/cm$^{2}$, 3.34 times higher than that of same-length straight lasers. At a bend radius of $r=150~mu$m, $I_{rm th} =16.6$ mA, and $J_{rm th}$ is comparable to straight cavity values, indicating that at this curvature there is negligible bending and scattering loss for the lowest-order- waveguide mode.