Improved Light Output of Nitride-Based Light-Emitting Diodes by Lattice-Matched AlInN Cladding Structure

摘要

We report the growth of AlInN nearly lattice-matched to GaN using metal–organic vapor phase epitaxy. The full-width at half-maximum of the AlInN peak measured by double crystal X-ray diffraction was 219.8 arcsec for the indium content of 20.8%. The effects of AlInN cladding layers on InGaN–GaN multiple-quantum-well light-emitting diodes (LEDs) were also investigated. From the room-temperature photoluminescence spectra, the shorter emission wavelength and the higher intensity were observed after employing AlInN cladding layers. Compared to the conventional LED, the light output intensity of the LED with AlInN cladding layers was increased due to the enhanced carrier confinement. Besides, we found the light output intensity could be saturated at higher injection current. Although the electrical property of the LED with AlInN cladding layers was slightly degraded, the experimental results in this study could explain the potential applicability of AlInN to the fabrication of cladding layers.