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首页> 外文期刊>Photonics Technology Letters, IEEE >GaN Light-Emitting Diodes for up to 5.5-Gb/s Short-Reach Data Transmission Over SI-POF
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GaN Light-Emitting Diodes for up to 5.5-Gb/s Short-Reach Data Transmission Over SI-POF

机译:GaN发光二极管,用于通过SI-POF进行高达5.5 Gb / s的短程数据传输

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摘要

We report a high-speed data transmission over a 1-mm diameter step-index polymer optical fiber (SI-POF) with GaN light-emitting diodes (LEDs) operating at 435 and 475 nm. The modulation bandwidths of the LEDs at 40 mA were 180 and 300 MHz, respectively. A maximum bit rate of 5.5 Gb/s was achieved with a 475-nm GaN LED at −1.8-dBm fiber-coupled power over a 1-m SI-POF employing 4-pulse-amplitude modulation format. Compared with the performance of a high-speed red resonant-cavity LED under the same test setup, the chromatic dispersion reduces the potential of the GaN LED-based system when the transmission distance is longer than 30 m.
机译:我们报告了在1mm直径的阶跃折射率聚合物光纤(SI-POF)上的高速数据传输,其中GaN发光二极管(LED)工作在435和475 nm。 LED在40 mA时的调制带宽分别为180和300 MHz。采用475纳米GaN LED在4.8m振幅调制格式的1-m SI-POF上以-1.8-dBm光纤耦合功率实现了5.5 Gb / s的最大比特率。与相同测试设置下的高速红色谐振腔LED的性能相比,当传输距离长于30 m时,色散降低了基于GaN LED的系统的潜力。

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