Blueshifting of InGaAsP-InP laser diodes using a low-energyion-implantation technique: comparison between strained andlattice-matched quantum-well structures

摘要

Blueshifted InGaAsP-InGaAs-InP laser diodes have been fabricatednusing a technique that includes a low-energy ion implantation, used tongenerate point defects near the surface of the structure, followed by anthermal anneal which causes the diffusion of these defects through thenquantum wells (QWs). This diffusion of point defects induces a localnintermixing of atoms in the QWs and barriers, which results in andecrease in the emission wavelength of the devices. Results obtainednwith strained and lattice-matched QW structures are compared. Fornlattice-matched structures, electroluminescence wavelength shifts asnlarge as 76 nm were obtained. Strained QW structures presented a muchnsmaller blueshift (≈10 nm). In both cases, we observed no significantnchange of the threshold current caused by the intermixing process