Area selectivity of InGaAsP-InP multiquantum-well intermixing byimpurity-free vacancy diffusion

摘要

Area selectivity of bandgap tuning in the InGaAsP-InPnmultiquantum-well structure has been investigated using low temperaturenphotoluminescence (PL). The bandgap blue-shift in the intermixed regionnwas as much as 170 meV for a rapid thermal anneal of 30 s at 850°C,nand was controllable using annealing temperature and time. From samplesnwith SiO2 stripe patterns, clearly separated PL peaks werenobserved centered at 0.95 and 1.08 eV, each representing signalsnoriginating from the dielectric capped and exposed areas, respectively.nIn samples with stripes intervals less than 6 Μm, PL signals did notnseparate, but formed one broad spectrum due to lateral diffusion. Thenlateral diffusion was found less than 3.0 Μm