Effects of interdiffusion-induced strain inGa0.51In0.49P-GaAs intermixed quantum wells

摘要

The effects of interdiffusion and strain introduced byninterdiffusion in lattice-matched GaInP-GaAs single quantum wells areninvestigated using an error function distribution to model thencompositional profile after interdiffusion. Group-III only and dominantngroup-III interdiffusion produce a large strain build up at theninterface, with compressive strain in the well, and tensile strain innthe barrier. In the case of group-III only interdiffusion, an abruptncarrier confinement profile is maintained even after significantninterdiffusion, with a double-welled bottom, and a potential buildup innthe barrier near the interface. Group-V only and group-V dominantninterdiffusion again cause a large strain buildup at the interface, withntensile strain in the well and compressive strain in the barrier.nDegeneracy of the heavy-hole and light-hole ground states can benachieved, and the electron-light-hole ground state transition energy cannalso become the effective bandgap energy of the intermixed structure.nThe model results are consistent with reported experimental results, andnshow that the effects of the interdiffusion-induced strain on thencarrier confinement profiles can be of interest for various quantum-wellndevice applications in this material system, including intersubbandninfrared photodetectors, polarization-insensitive electroabsorptionnmodulators, and lasers