PURPOSE: A method of changing wavelength response of quantum well infrared photo-detectors by using quantum well intermixing technique is provided to change the detected wavelength band of the quantum well infrared photo-detectors by using a substrate having a changed band gap of a quantum well infrared absorption layer. CONSTITUTION: A band gap of a quantum well infrared absorption layer of quantum well infrared photo-detectors is increased by using various quantum well intermixing processes. A quantum well infrared detection device is fabricated by using a substrate having the increased band gap of the quantum well infrared absorption layer. Various dielectric capping layers such as SiO2, SiNx, and SrF2 are coated on the substrate. The band gap of the quantum well infrared absorption layer is increased by performing a thermal process for the substrate.
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