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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm
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High-power tensile-strained GaAsP-AlGaAs quantum-well lasers emitting between 715 and 790 nm

机译:高功率拉伸应变的GaAsP-AlGaAs量子阱激光器,发射的波长为715至790 nm

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摘要

Tensile-strained GaAsP quantum wells embedded in AlGaAs large optical cavity structures were studied. In the wavelength range between 715 and 790 nm, very high output power and excellent conversion efficiencies of broad-area lasers have been obtained.
机译:研究了嵌入AlGaAs大光腔结构中的拉伸应变GaAsP量子阱。在715至790 nm的波长范围内,已经获得了非常高的输出功率和广域激光器的出色转换效率。

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