Hybrid integration of smart pixels by using polyimide bonding:demonstration of a GaAs p-i-n photodiode/CMOS receiver

摘要

The fabrication procedure of smart pixels based on a hybridnintegration of compound semiconductor photonic devices with silicon CMOSncircuits is described. According to the 0.8-Μm design rule, CMOSnreceiver/transmitter circuits are designed for use in vertical-cavitynsurface-emitting laser (VCSEL)-based smart pixels, and 16×16 andn2×2 Banyan-switch smart-pixel chips are also designed. By usingnour polyimide bonding technique, we integrated GaAs pin-photodiodesnhybridly on the CMOS circuits. The photodetector (PD)/CMOS hybridnreceiver operated error free at up to 800 Mb/s. Successfulnoptical/optical (O/O) operation (a bit rate up to 311 Mbit/s) of then2×2 Banyan-switch smart-pixel chip implemented with another VCSELnchip is also demonstrated