Hybrid integration of GaAs pin-photodiodes with CMOS transimpedance amplifier circuits

摘要

GaAs pin-photodiodes were integrated with 0.8 /spl mu/m CMOS transimpedance amplifier circuits by means of a wafer-scale hybrid-integration technology using polymide bonding. The capacitance of the integrated photodiode was 50 fF, which included almost no parasitic. Owing to this low capacitance, the hybrid optical receiver operated at a high speed of up to 800 Mbit/s.