Realization and characterization of 8×8 resonant cavity LEDarrays mounted onto CMOS drivers for POF-based interchipinterconnections

摘要

An 8×8 array of resonant-cavity light emitting diodesn(RCLED's) emitting at 980 nm and flip-chip mounted onto complimentarynmetal-oxide-semiconductor (CMOS) integrated drivers, is presented. ThenRCLED's are optimized for maximal extraction efficiency into thennumerical aperture of polymer optical fibers (NA=0.5) and minimalnoptical crosstalk. Design of the optimal cavity structure is presented,nand 8×8 arrays are realized and mounted directly onto standardnCMOS chips using a solder reflow technique. The CMOS integrated driversnare designed for high-speed operation and low-power consumption, and arenrealized in 0.8 and 0.6-Μm CMOS technology. The electroopticalnmodules have been realized and characterized, and over 50-ΜW opticalnpower coupled to POF at 3-mA drive current is reported. Open eyendiagrams at operation speed up to 250 Mb/s are presented. Thesencharacteristics are compatible with CMOS integrated low-power receivers