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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >New frontiers in quantum cascade lasers and applications
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New frontiers in quantum cascade lasers and applications

机译:量子级联激光器及其应用的新领域

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摘要

Recent advances and new directions in quantum cascade (QC) lasers are discussed. Invented in 1994 following many years of research on band-structure engineered semiconductors and devices grown by molecular beam epitaxy, this fundamentally new laser has rapidly advanced to a leading position among midinfrared semiconductor lasers in terms of wavelength agility as well as power and temperature performance. Because of the cascaded structure, QC lasers have a slope efficiency proportional to the number of stages. Devices with 100 stages having a record peak power of 0.6 W at room temperature are reported. QC lasers in the AlInAs-GaInAs lattice matched to InP material system can now be designed to emit in the whole midinfrared range from 4 to 20 /spl mu/m by appropriately choosing the thickness of the quantum wells in the active region. Using strained AlInAs-GaInAs, wavelengths as short as 3.4 /spl mu/m have been produced. New results on QC lasers emitting at 19 /spl mu/m, the longest ever realized in a III-V semiconductor laser, are reported. These devices use innovative plasmon waveguides to greatly enhance the mode confinement factor, thereby reducing the thickness of the epitaxial material. By use of a distributed feedback (DFB) geometry, QC lasers show single-mode emission with a 30-dB side-mode suppression ratio. Broad continuous single-mode tuning by either temperature or current has been demonstrated in these DFB QC lasers at wavelengths in two atmospheric windows (3-5 and 8-13 /spl mu/m), with continuous-wave linewidths >1 MHz when free running and /spl sim/10 KHz with suitable locking to the side of a molecular transition. These devices have been used in a number of chemical sensing and spectroscopic applications, demonstrating the capability of detecting parts per billion in volume of several trace gases. Sophisticated band-structure engineering has allowed the design and demonstration of bidirectional lasers. These devices emit different wavelengths for opposite bias polarities. The last section of the paper deals with the high-speed operation of QC lasers. Gain switching with pulse widths /spl sim/50 ps and active modelocking with a few picosecond-long pulses have been demonstrated. Finally, a new type of passive modelocking has been demonstrated in QC lasers, which relies on the giant and ultrafast optical Kerr effect of intersubband transitions.
机译:讨论了量子级联(QC)激光器的最新进展和新方向。在对带结构工程半导体和分子束外延生长的器件进行了多年研究之后,该发明于1994年发明,从波长敏捷性,功率和温度性能等方面来看,这种根本上崭新的激光器已经迅速发展到中红外半导体激光器的领先地位。由于级联结构,QC激光器的倾斜效率与级数成正比。据报道,具有100级的器件在室温下具有创纪录的0.6 W峰值功率。现在,通过适当选择有源区中量子阱的厚度,可以将与InP材料系统匹配的AlInAs-GaInAs晶格中的QC激光器设计为发出4至20 / splμm/ m的整个中红外范围。使用应变的AlInAs-GaInAs,已经产生了短至3.4 /splμm/ m的波长。据报道,在QC激光器上以19 / spl mu / m发射的新结果是III-V半导体激光器中最长的实现。这些设备使用创新的等离激元波导来大大提高模式限制因子,从而减小外延材料的厚度。通过使用分布式反馈(DFB)几何,QC激光器显示出具有30 dB副模抑制比的单模发射。这些DFB QC激光器在两个大气窗口(3-5和8-13 / spl mu / m)的波长下已证明了通过温度或电流进行的广泛连续单模调谐,自由时连续波线宽> 1 MHz和/ spl sim / 10 KHz,并在分子跃迁一侧进行适当锁定。这些设备已用于许多化学传感和光谱应用中,证明了能够检测每十亿分之一体积的几种痕量气体的成分。先进的带结构工程技术可以设计和演示双向激光器。这些器件针对相反的偏置极性发射不同的波长。本文的最后一部分讨论了QC激光器的高速运行。已经证明了脉冲宽度为/ spl sim / 50 ps的增益切换和几个皮秒长的脉冲的主动锁模。最后,已经在QC激光器中证明了一种新型的无源对接,它依赖于子带间过渡的巨大和超快光学Kerr效应。

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