Continuous-wave low-threshold performance of 1.3-Μm InGaAs-GaAsquantum-dot lasers

摘要

The understanding of material quality and luminescencencharacteristics of InGaAs-GaAs quantum dots (QD's) is advancing rapidly.nIntense work in this area has been stimulated by the recentndemonstration of lasing from a QD active region at the technologicallynimportant 1.3-Μm wavelength from a GaAs-based heterostructure laser.nAlready, several groups have achieved low-threshold currents and currentndensities at room temperature from In(Ga)As QD active regions that emitnat or close to 1.3 Μm. In this paper, we discuss crystal growth, QDnemission efficiency, and low-threshold lasing characteristics forn1.3-Μm InGaAs-GaAs QD active regions grown using submonolayerndepositions of In, Ga, and As. Oxide-confinement is effective innobtaining a low-threshold current of 1.2 mA and threshold-currentndensity of 19 A/cm2 under continuous-wave (CW) roomntemperature (RT) operation. At 4 K, a remarkably low threshold-currentndensity of 6 A/cm2 is obtained