Semiconductor dynamic aperture for near-field terahertz waveimaging

摘要

We describe and discuss near-field terahertz wave imaging with andynamic aperture created on a semiconductor wafer. The spatialnresolution of a near-field terahertz wave imaging system with a dynamicnaperture created on a GaAs wafer is determined by the diameter of thengating-beam-induced thin photocarrier layer. With a dynamic aperturencreated on a GaAs wafer, we have achieved a subwavelength spatialnresolution of ~Λ/10. In addition, near-field terahertz wavenimaging with a dynamic aperture overcomes the limitations in thenreported methods of near-field terahertz wave imaging. Particularly, itnis free of the high-pass filtering effect. Various terahertz images arenpresented to show the possible applications