Low-threshold and high-temperature operation of InGaAlP-basedproton-implanted red VCSELs

摘要

InGaAlP-based red vertical-cavity surface-emitting lasers (VCSELs)nhave been successfully fabricated using the proton-implanted planarnstructure suitable for mass production. A low threshold current of 2.5nmA with 666-nm lasing wavelength at room temperature and a high maximumncontinuous wave (CW) lasing temperature of 60°C have been achieved.nIn addition, it was found that the maximum CW lasing temperaturendecreased linearly with the increase in the device diameter. This wasnbecause the thermal resistance of the device was approximately inverselynproportional to the device diameter