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首页> 外文期刊>IEEE journal of selected topics in quantum electronics >Influence of temperature and optical confinement on threshold current of an InGaAs/InP quantum wire laser
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Influence of temperature and optical confinement on threshold current of an InGaAs/InP quantum wire laser

机译:温度和光学限制对InGaAs / InP量子线激光器的阈值电流的影响

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摘要

In this paper, we investigate the influence of the temperature on gain and threshold current density of a V-groove quantum wire InGaAs/InP laser. The calculation shows that room-temperature operation can be achieved if the optical confinement is large enough (0.26% in our case), while its slight improvement above this limit (around 0.4%) can provide a significant reduction of the threshold current (more than 70%) and an improved temperature stability of the laser.
机译:在本文中,我们研究了温度对V型槽量子线InGaAs / InP激光器的增益和阈值电流密度的影响。计算表明,如果光限制足够大(在我们的情况下为0.26%),则可以实现室温操作,而超过此限制(0.4%左右)的轻微改善可以显着降低阈值电流(大于70%),并提高了激光器的温度稳定性。

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